opt o d iod e c or p . 750 mitchell road, newbury p ark, california 91320 phone (805) 499-0335 fax (805) 499-8108 high-power gaalas ir emitter chips od-880-c features ? high reliability lpe gaalas irled chips ? graded-bandgap led structure for high radiant power output ? 880nm peak emission ? good ohmic contacts (gold alloys) ? good bondability all dimensions are nominal values in inches unless otherwise specified. 40 .014 .014 n p .005 .003 gold contacts emitting surface .006 peak emission wavelength, l p spectral bandwidth at 50%, dl forward voltage, v f reverse breakdown voltage, v r capacitance, c rise time fall time i f = 100ma i r = 10 m a v r = 0v 5 880 80 1.55 30 17 0.5 0.5 1.9 nm nm volts volts pf m sec m sec electro-optical characteristics at 25? parameters test conditions min typ max units i f = 100ma i f = 20ma total power output, p o mw 8 14 2 power dissipation continuous forward current peak forward current (10 m s, 300 hz) reverse voltage storage and operating temperature range maximum junction temperature 190mw 100ma 3a 5v -65 ? to 150? 150? absolute maximum ratings at 25? the exact performance data depends on your package configura tion and technique. data listed in this specification is for the chip mounted on a to-46 header using silver epoxy as the die attach material. all sales are final after 60 days from the shipment date. opto diode must be notified of any d iscrepancies within this period. i f = 50ma
opt o d iod e c or p . 750 mitchell road, newbury p ark, california 91320 phone (805) 499-0335 fax (805) 499-8108 high-power gaalas ir emitter chips OD-148-C 41 features ? high reliability lpe gaalas irled chips ? open center emission for imaging applications ? high output uniformity from emitting surfaces ? gold contacts for high reliability bonding all dimensions are nominal values in inches unless otherwise specified. .014 .014 .008 n p .005 .003 gold contacts .002 emitting surface gold metallization total power output, p o peak emission wavelength, l p spectral bandwidth at 50%, dl forward voltage, v f reverse breakdown voltage, v r capacitance, c rise time fall time i f = 100ma i f = 100ma i r = 10 m a v r = 0v 6 5 8 880 80 1.55 30 17 0.5 0.5 1.9 mw nm nm volts volts pf m sec m sec electro-optical characteristics at 25? parameters test conditions min typ max units i f = 50ma power dissipation continuous forward current peak forward current (10 m s, 300 hz) reverse voltage storage and operating temperature range maximum junction temperature 190mw 100ma 3a 5v -65 ? to 150? 150? absolute maximum ratings at 25? the exact performance data depends on your package configura tion and technique. data listed in this specification is for the chip mounted on a to-46 header using silver epoxy as the die attach material. all sales are final after 60 days from the shipment date. opto diode must be notified of any d iscrepancies within this period.
opt o d iod e c or p . 750 mitchell road, newbury p ark, california 91320 phone (805) 499-0335 fax (805) 499-8108 high-power gaalas emitter chips od-24x24-c 42 features ? high current capability ? 2 bond pads for uniform output ? gold contacts for high reliability bonding ? high reliability lpe gaalas irled chips all dimensions are nominal values in inches unless otherwise specified. .024 .024 n p .005 .003 gold contacts emitting surface .006 .005 .005 .006 .006 d 2 places total power output, p o peak emission wavelength, l p spectral bandwidth at 50%, dl forward voltage, v f reverse breakdown voltage, v r capacitance, c rise time fall time i f = 100ma i f = 200ma i r = 10 m a v r = 0v 7 5 10 880 80 1.6 30 60 0.7 0.7 2 mw nm nm volts volts pf m sec m sec electro-optical characteristics at 25? parameters test conditions min typ max units i f = 50ma power dissipation continuous forward current peak forward current (10 m s, 300 hz) reverse voltage storage and operating temperature range maximum junction temperature 400mw 200ma 7a 5v -65 ? to 150? 150? absolute maximum ratings at 25? the exact performance data depends on your package configura tion and technique. data listed in this specification is for the chip mounted on a to-46 header using silver epoxy as the die attach material. all sales are final after 60 days from the shipment date. opto diode must be notified of any d iscrepancies within this period.
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